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gate turn-off thyristors (gto)
production of gtos commenced in the mid 1980s. a gto is a thyristor that can be turned off by applying a current to the gate in the reverse direction to that required to turn it on.
gtos are optimized for low conduction losses. the typical on-off switching frequency is in the range of 200 - 500 hertz for most applications. gtos are, by nature, relatively slow switches.
typical transition times from on to off state and vice versa are in a range of 10 - 30 microseconds. all gtos require protective networks called "snubbers" for turn-on and turn-off. the turn-on snubber circuit, in essence an inductor, limits the rate of current rise. for turn-off, the gto requires a device that limits the rate of voltage rise, in essence a capacitor.
all abb gtos are press-pack devices. they are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.
asymmetric gtos are divided in two categories: buffer layer and standard. buffer layer gtos have exceptionally low on-state and dynamic losses. fine pattern types (5sgf) are optimised for fast switching and transparent emitter (5sgt) for low on-state losses. the standard gtos have excellent trade-off between on-state and switching losses.
| part number | vdrm (v) | vdc (v) | itgqm @ cs(a) | itgqm @ cs(µf) | package* (mm) |
| standard | |||||
| 2500 | 1400 | 1500 | 3 | 75/47 | |
| 2500 | 1400 | 2000 | 4 | 93/63 | |
| 2500 | 1400 | 2500 | 6 | 93/63 | |
| 2500 | 1400 | 3000 | 5 | 108/75 | |
| 4500 | 2800 | 600 | 1 | 58/34 | |
| 4500 | 2200 | 2000 | 4 | 93/63 | |
| 4500 | 2800 | 3000 | 6 | 108/75 | |
| 4500 | 2800 | 4000 | 6 | 120/85 |
*note: pole-piece diameter / housing height
| part number | vdrm (v) | vdc (v) | itgqm @ cs (a) | itgqm @ cs(µf) | package* (mm) |
| buffer layer | |||||
| 4500 | 3000 | 3000 | 3 | 108/75 | |
| 4500 | 2800 | 4000 | 6 | 120/85 |
*note: pole-piece diameter / housing height