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ev-type
single igbt dual switch (~ ⅓ of our ed-type)
record current density 1.2kv, 2x250a on 45x45x4mm3
–very low inductance <10nh à significant lower over-voltage
–lowest contact resistance <0.9mω， optimal use of low vcesat igbt
–low rth and excellent cycling capability thanks to rugged sin substrate
–integrated thermistor